Nano Silicon{0}}Carbon Anode Khoom Taw Qhia
Technical Positioning thiab Core Breakthrough
Cov khoom no txais yuav plaub - tiam triple - qauv tsim ntawm "core-plhaub - buffer txheej - conductive network." Los ntawm molecular- theem kev hloov kho thiab ntau-siv carbon txheej txheej tshuab, nws ua tiav qhov kev sib tw ntawm kev lag luam ntawm kev nthuav dav siab hauv nano- cov ntaub ntawv silicon, ua tiav qhov kev pom zoo ntawm qhov pib ua haujlwm siab thiab lub neej ntev.
Core Performance Parameters
|
Kev ntsuas qhov tseem ceeb |
Performance Parameters |
Technical Advantage |
|---|---|---|
|
Tshwj xeeb muaj peev xwm |
1500-2200 mAh / g (kho tau) |
4-6 zaug siab dua li cov graphite |
|
Thawj Coulombic Efficiency |
92-94% (tuaj yeem nce mus rau 96% ntawm pre-lithiation) |
Proprietary khoom electrolyte interface hloov kho tshuab |
|
Expansion Rate |
Tsawg dua lossis sib npaug li 15% (tom qab 100 lub voj voog ntawm 1C) |
3D ntxeem tau carbon matrix buffer qauv |
|
Lub neej voj voog |
Ntau tshaj los yog sib npaug rau 80% muaj peev xwm tuav tau tom qab 1500 cycles |
Gradient density txheej technology |
|
Coj mus rhaub ceev |
0.95-1.25 g / cm³ |
Spheroidized thib ob granulation txheej txheem |
|
Qhov chaw tshwj xeeb |
2.5-4.5 m²/g |
Tswj qhov chaw passivation technology |
Customization Dimensions
Customization qauv
Silicon-rau-carbon ratio (5:95 txog 50:50)
Core-rau- plhaub thickness piv (1: 1 rau 1: 3)
Porosity (15% - 40%)
Electrochemical Khoom Customization
Fast-charge type: >88% muaj peev xwm tuav ntawm 5C tus nqi
Wide-temperature type: >85% muaj peev xwm tuav ntawm -40℃/ 60 degree
High- hom kev nyab xeeb: Hla 150℃kub lub thawv kuaj
Txheej txheem Compatibility Customization
Compatibility nrog dej-raws li / hnyav-raws li binders
Optimization rau cov txheej txheem qhuav / ntub electrode
Precise tswj ntawm pre-lithiation℃(0-10%)
Tswv yim Technology Highlights
Multi-stage Buffer Architecture
Sab hauv txheej: Hollow carbon spheres tsis ntim ntim hloov
Nruab nrab txheej: Elastic polymer interface txheej
Txheej txheej: Graphene conductive network
Atomic Layer Deposition (ALD) Txheej
2nm ultra{1}}thin Al₂O₃/SiO₂ txheej txheej
Txhim kho interface stability los ntawm 300%
Intelligent Prelithiation Technology
Kev them nyiaj lithium meej siv micro-encapsulated lithium hmoov
Residual alkali tswj <200 ppm
Precise Application Scenario Matching
|
Daim ntawv thov teb |
Pom zoo qauv |
Cov yam ntxwv zoo |
|---|---|---|
|
High -End Electric Tsheb |
FD-31811 |
Txhawb 1000km ntau, 80% them hauv 10 feeb |
|
Aerospace Fais Fab Systems |
FD-31821 |
Ua haujlwm ntawm -60 degree, 20,000 cycles |
|
Cov Khoom Siv Kho Mob Implant |
TSW-31831 |
10-xyoo kev pab cuam lub neej, Biocompatibility ntawv pov thawj |
|
High -End Consumer Electronics |
TSW-31841 |
Volumetric zog ceev 1500 Wh / L |
Quality Assurance System
Intelligent Production Line
Nano- theem particle loj tswj (CV < 5%)
Daim ntawv qhia txog kev ntsuas ntsuas tag nrho muab nrog rau txhua pawg
Sustainable Production
Silicon raw khoom siv tus nqi ntau dua lossis sib npaug li 99%
40% txo cov txheej txheem carbon emissions
Technical Service Tiers
Basic Tier: Cov ntaub ntawv qhia kev sib haum xeeb
Advanced Tier: Kev sib koom tes electrolyte kev loj hlob
Strategic Tier: Sib koom R&D platform tsev, IP sib koom
Peb Qhov Kev Pom Zoo
Peb tsav kev lag luam daim ntawv thov ntawm silicon- cov ntaub ntawv carbon los ntawm kev nruam ntej, muab cov kev daws teeb meem zoo tshaj qhov kev cia siab rau txhua tus neeg siv khoom. Cov qauv pub dawb thiab cov lus pom zoo muaj nyob rau thaum thov.
Lus Cim: Cov qauv muaj los ntawm gram mus rau tuj nplai, nrog rau cov khoom siv electrolyte thiab cov txheej txheem cov txheej txheem.
Cim npe nrov: nano silicon-cov ntaub ntawv carbon tsis zoo electrode, Tuam Tshoj nano silicon-carbon negative electrode cov ntaub ntawv manufacturers, lwm tus neeg, Hoobkas
